Preliminary program
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May 16th |
CONFERENCE ROOM I,II, III,VI |
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CONFERENCE ROOM I |
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9:00-12:00 |
Wide Bandgap Power Device Technology Conference on exhibition and investment |
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CONFERENCE ROOM I,II, III,VI |
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14:00-17:30 |
ITRW meeting |
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16:00 -19:00 |
Registration Open |
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May 17th AM |
Huicheng HALL |
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YONG PROFESSIONAL |
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8:30-8:45 |
Opening & Welcome of young professional forum |
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8:45-9:15 |
Qian Sun: “GaN-on-Si Power Diodes and Normally-Off HEMTs” |
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9:15-9:45 |
Laili Wang: “Challenges and Opportunities in Package and Integration of Wide Bandgap Power Devices” |
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9:45-10:15 |
Feng Zhang: “Advances in SiC Power Devices in China” |
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10:15-10:45 |
Break |
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10:45-11:15 |
Jun Wang: “Cost-Effective SiC/Si Hybrid Switch Technology for High-Performance Power Conversion Applications” |
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11:15-11:45 |
Zhiliang Zhang : “High Frequency GaN Power Converters” |
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11:45-13:30 |
Lunch + Break |
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May 17th PM |
HUICHENG HALL |
CONFERENCE ROOM VI |
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TUTORIAL |
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13:30-14:30 |
Eric Persson: “Practical design considerations for high-efficiency PFC applications using GaN” |
Guoquan Lu: “Advanced Die-attach by Metal-powder Sintering: The Science and Practice” |
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14:30-14:45 |
Break |
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14:45-15:45 |
Guosheng Sun: “The role of epitaxy in the fabrication of 4H-SiC power devices” |
Di Gan: “The application research of SiC IPM in air conditioner” |
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15:45-16:00 |
Break |
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16:00-17:00 |
Pengju Kang: “Reinventing Power Electronics Systems in the era of Industrial Internet” |
Chris Mi: “Wireless Power Transfer Technology and Application of Wide Bandgap Devices in WPT” |
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17:00-18:00 |
Dinner in CULLINAN HOTEL |
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18:00-22:30 |
Social event "everlasting regret"-a large-scale historical dance drama |
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Huicheng HALL |
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kEYNOTE SPEECH |
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8:30-9:00 |
Opening & Welcome of 1st WiPDA-Asia |
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9:00-9:30 |
Fred C. Lee: “Is GaN a Game Changer?” |
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9:30-10:00 |
Alan Mantooth: “Emerging Trends in Silicon Carbide Power Electronics” |
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10:00-10:30 |
Photograph+Break |
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10:30-11:00 |
Frede Blaabjerg: “Reliability engineering of wide bandgap based power converters” |
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11:00-11:30 |
Yan-Fei Liu: “Topologies and Controls to Take Full Advantages of GaN Switches” |
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11:30-13:45 |
Lunch + Break |
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13:45-14:15 |
Tim McDonald: “State of GaN Reliability in Power Conversion Applications” |
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14:15-14:45 |
Fred Wang: “The Impact of Fast Switching WBG Devices on Converter Design” |
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14:45-15:15 |
Don Tan: “Structured Microgrids: Invaluable Assets for Substation Automation & Modernization” |
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15:15-15:45 |
Dehong Xu: “Impact of SiC Device on Soft Switching Three-Phase Inverters” |
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15:45-16:00 |
Break |
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POSTER SESSION |
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16:00-17:10 |
TITLE |
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Applications in renewable energy and storage, transportation, industrial drives, and grid power |
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D01-01 |
The Security Protection Strategies of SiC MOSFET NPC Tri-level Converter |
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D01-02 |
Capacitor Voltage Ripple Reduction of A 4-Level Hybrid Clamped Converter Using Switching State Redundancy for Medium-voltage Drive |
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D01-03 |
Three-Layer Structure Triboelectric Electricity Generator with ULP Rectifier for Mechanical Energy Harvester |
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D01-04 |
Single Phase integrated Ćuk Transformer-less SiC Inverter for Grid Connected PV Systems |
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D01-05 |
A New Auxiliary Power Supply System of Magnetic Levitation Train Based on SiC MosFet |
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D01-06 |
The Drive Circuit Design for Paralleling Operation of Enhancement GaN HEMT in an Isolated DC-DC converter |
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D01-07 |
Research of high-power converter based on the wide bandgap power semiconductor devices for rail transit electrical drive |
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D01-08 |
Design of a High-Efficiency Wireless Charging System for Electric Vehicle |
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D01-09 |
Power Loss Analysis of a Novel Modular Multilevel Converter Based on Semi-full-bridge Sub-module with SiC-MOSFET Switched Capacitors |
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D01-10 |
Loss Analysis in wireless power transfer system based on GaN |
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Common-mode and EMI management |
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D02-01 |
Common Mode Modeling and Reduction of GaN-based Full-bridge Inverters |
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D02-02 |
Analysis of EMI in Motor System Driven by PWM Inverter |
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D02-03 |
Variable Switching Frequency PWM for Three-Level NPC Converter Based on Peak Prediction of Current Ripple |
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Device characterization and modeling |
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D03-01 |
Automatic V-I Alignment for Switching Characterization of Wide Band Gap Power Devices |
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D03-02 |
Analysis of Schottky Forward Current Transport Mechanisms in AlGaN/GaN HEMTs over a Wide Temperature Range |
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D03-03 |
Measurement of Carrier Lifetime in 4H-SiC PiN Diodes Employing OCVD Method at Different Temperature |
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D03-04 |
Influence of Parasitic Capacitance on Transient Current Distribution in Paralleled SiC MOSFETs |
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D03-05 |
Current Sharing Analysis of Paralleled GaN HEMT Via Feedback Theory |
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D03-06 |
Characterization of SiC MOSFET Switching Performance |
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D03-07 |
Influence of the oxygen in Hot-Carrier-Stress-Induced degradation in AlGaN/GaN high electron mobility transistors |
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D03-08 |
Threshold voltage control for AlGaN/GaN Fin-HEMTs with combined technologies |
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D03-09 |
IGCT Circuit Model Based on Pspice Modeling Platform |
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D03-10 |
Simulation of a Short-Channel 4H-SiC UMOSFET with Buried p Epilayer for Low Oxide Electric Field and Switching Loss |
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D03-11 |
Failure Models of SiC MOSFET and SiC JFET |
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D03-12 |
Quantitative Analysis and Suppression Strategies of Dvdt Induced Turn-on of Cascode GaN FETs in Half-bridge Circuits |
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D03-13 |
First-principles investigations of point defects at 4H-SiC/SiO2 interface |
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D03-14 |
A Model Parameter Optimization Method of SiC Power MOSFET |
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D03-15 |
GaN-based enhancement-mode FinFET with double-channel AlGaN/GaN heterostructure |
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D03-16 |
4H-SiC Light Triggered Thyristor with Gradually Doped Thin n-base |
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D03-17 |
Obtaining the Exact Electrical Parameters of Ohmic Contacts using a Novel Electrode Pairs (EPs) Design Method |
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D03-18 |
General Modeling and Loss Prediction of SiC Power Module |
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D03-19 |
Gallium Nitride Power Device Modelling using Deep Feed Forward Neural Networks |
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D03-20 |
Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes |
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D03-21 |
On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures |
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D03-22 |
Temperature Dependence of 1.2 kV 4H-SiC Power MOSFET Body Diode over Temperature Range of 90K to 603K |
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D03-23 |
Influence of Parasitic Capacitances on Transient Current Distribution of Paralleled SiC MOSFETs |
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D03-24 |
Reliability investigation of AlGaN/GaN HEMTs under reverse-bias stress at 77K |
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D03-25 |
Aging of GaN GIT under repetitive short-circuit tests |
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Device structures and fabrication techniques |
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D04-01 |
Simulation Study Of An Injection Enhanced SiC IGBT |
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D04-02 |
Vertical GaN MOSFETs with Over 1.6 kV breakdown voltage :A theoretical studying |
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D04-03 |
Fully recessed-gate normally-off AlGaN/GaN high electron mobility transistors with high breakdown electric field |
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D04-04 |
Improved fmax and breakdown voltage in AlGaN/GaN HEMT with plasma treatment |
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D04-05 |
Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMT |
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D04-06 |
High Breakdown Field AlGaN/GaN HEMT with AlN Super Back Barrier |
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D04-07 |
A 10kV 4H-SiC PiN Diode with Gradual Doping Buffer Layers and p+ Adjusting Regions at Cathode |
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D04-08 |
A new termination structure with FLR and trench for 3.3kV SiC PiN diode |
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D04-09 |
Study on interfacial properties of SiC MOS with Barium |
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D04-10 |
A novel Nitrogen Passivation method for improving the SiO2/SiC interface properties |
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D04-11 |
Characterization and Detailed Analysis of The Crosstalk With SiC MOSFET |
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Gate drive and other auxiliary circuits |
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D05-01 |
Investigation of the Effects of Snubber Capacitors on Turn-on Overvoltage of SiC MOSFETs |
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D05-02 |
Design of Gate Driver and Power Device Evaluation Platform for SiC MOSFETS |
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D05-03 |
Novel Tiny 1.2kV SiC MOSFET Gate Driver |
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D05-04 |
Driving a Silicon Carbide Power MOSFET with a fast Short Circuit Protection |
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D05-05 |
Gate Control Optimization of Si/SiC Hybrid Switch Within Wide Power Rating Range |
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D05-06 |
Switching characterization and low inter-winding capacitance gate driver power supply design of SiC MOSFET for the 300kHz 10kW inverter |
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Hard-switched and soft-switched applications |
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D06-01 |
A High Performance Isolated High Frequency Converter Based on GaN HEMT |
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D06-02 |
Two Stage eGaN FET-Based Isolated Class E DC-DC Converter |
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D06-03 |
Damping Current Oscillation of SiC JFET Bi-directional Switches during Turn-on Transient |
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D06-04 |
Impact of Parasitic Elements on Power Loss in GaN- based Low-voltage and High-current DC-DC Buck Converter |
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Packaging, power modules, and ICs |
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D07-01 |
A Double-sided Cooling 1200V/600A Multichip Half-bridge IGBT Module Using Nano-silver Paste as Die-attaching Material |
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D07-02 |
Power Module with Large Short Term Current Capability by Using Phase Change Material |
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D07-03 |
Optical Coherence Tomography-Based IGBT Non-Destructive Testing |
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D07-04 |
The Thin Plate Heat Pipe Koch Fractal Wick Structures Investigation |
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D07-05 |
Vibrational Energy Harvesting System with MPPT for IoT Applications |
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D07-06 |
High Efficiency Quasi Class-J GaN PA with 1.8-3.0GHz Bandwidth |
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D07-07 |
A 2.6GHz Class-AB GaN Power Amplifier with Maximum Output Power of 56W Achieving 70% Power Added Efficiency |
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D07-08 |
A Novel Cascode GaN Switch Integrating Paralleled GaN DHEMTs for High-Power Applications |
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Very high efficiency and compact converters |
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D08-01 |
A Single SiC Switch Based ZVZCS Topology for Tapped Inductor Buck Converter |
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D08-02 |
Composite Modular Power Delivery Architecture for Next-Gen 48V Data Center Applications |
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D08-03 |
GaN-based High Efficiency and High Power Density DC/DC Power Supply |
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D08-04 |
A High Efficiency 2.5 kW Bidirectional FB-CLTC Resonant DC–DC Converter with Large Voltage Ratio |
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D08-05 |
A Novel High-Frequency and High-Efficiency Synchronous Buck Converter with a Small Coupled Inductor |
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D08-06 |
A Digital Control Method with Feedforward Reconstruction for Improved Sampling Interference Suppression in GaN HEMTs based Totem-pole PFC Converters |
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D08-07 |
Design and Optimization of Energy Storage Inductor for High Power High-Frequency DC-DC Converter |
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D08-08 |
Efficiency impacts of 1.2kV Silicon Carbide MOSFETs for isolated two stage AC-DC power conversion |
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D08-09 |
48V to 1V voltage regulator module with magnetic integration |
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18:00-21:00 |
Banquet & Activities |
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May 19th AM |
HUICHENG HALL |
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KEYNOTE SPEECH |
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8:30-9:00 |
Jason Lai: “Mega-Hertz Switching Challenges with Wide Bandgap Devices” |
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9:00-9:30 |
Dan Kinzer: “GaN Power IC Performance, Reliability, and System Benefits” |
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9:30-10:00 |
Jin Wang: “High Power Applications of Medium Voltage Wide Bandgap Power Devices” |
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10:00-10:30 |
Break |
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10:30-11:00 |
Xu Yang: “Wide Band Gap Devices pushing forward DC Utility Grid in China” |
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11:00-11:30 |
Jincheng Zhang: “Ultra-Wide Bandgap Semiconductor Power Devices in Xidian University” |
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11:30-13:50 |
Lunch + Break |
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May 19th PM |
CONFERENCE ROOM I,II, III,VI |
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ORAL SESSION |
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CONFERENCE ROOM I: Packaging& Gate drive |
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13:50-14:10 |
Saijun Mao: “300W 175°C half bridge power building block with SiC MOSFETs for harsh environment applications” |
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14:10-14:30 |
Xuchao Jiang: “A 1MHz Gate Driver for Parallel Connected SiC MOSFETs with Protection Circuit” |
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14:30-14:50 |
Zhao Wang: “Thermo-Mechanical Analysis of SiC Schottky-Barrier Diode Press Pack Packaging using Finite Element Simulation” |
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14:50-15:10 |
Xiaoling Li: “Comparative Packaging Evaluation and Failure Mode Analysis of SiC, Si, and Hybrid Power Modules” |
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15:10-15:30 |
Jingru Dai: “Thermal performance and reliability of high temperature SiC die attachments on direct cooling stacked Si3N4 substrates” |
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15:30-16:00 |
Break |
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16:00-16:20 |
He Li: “Gate drive Design for a Hybrid Si IGBT/SiC MOSFET Module” |
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16:20-16:40 |
Zheng Wang: “Planar Multichip Half-bridge Power Modules by pressureless sintering of nanosilver in formic acid” |
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16:40-17:00 |
Fengtao Yang: “A Novel Packaging Method Using Flexible Printed Circuit Board for High-Frequency SiC Power Module” |
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17:00-17:20 |
Cheng Zhao: “A Phase-Leg Full SiC Power Module Used in Vienna Rectifiers” |
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CONFERENCE ROOM II: HIGH EFFICIENVY CONVERTERS |
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13:50-14:10 |
Junzhong Xu: “DC-Link Capacitors RMS Current Reduction PWM method Based High Frequency SiC Three-Phase Inverters” |
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14:10-14:30 |
Yajie Qiu: “High-Power-Density 400VDC-19VDC LLC Solution with GaN HEMTs” |
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14:30-14:50 |
Zihan Gao:“A GaN-Based Integrated Modular Motor Drive for Open-Winding Permanent Magnet Synchronous Motor Application” |
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14:50-15:10 |
Jiandong Dai: “Design of a 20MHz eGaN FET-Based Isolated Class E DC-DC Converter” |
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15:10-15:30 |
Yu Chen: “Non-Magnetic Resonant-Type High-Frequency High-Voltage Power Conversion with Silicon Carbide Power Semiconductor Devices” |
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15:30-16:00 |
Break |
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16:00-16:20 |
Lin Fan: “An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices” |
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16:20-16:40 |
Yang Chen: “Charging Speed Optimization of Bidirectional Flyback Converter for High Speed Dielectric Elastomer Actuator” |
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16:40-17:00 |
Zhizhao Niu: “Three-Phase Buck Rectifier Based on SiC MOSFETs Used in Power Factor Correction” |
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17:00-17:20 |
Zhiyuan Qi: “Three dimensional integration of GaN-HEMT-based DC-DC converter using planar inductor as a substrate” |
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17:20-17:40 |
Qiqi Li: “Analytical Switching Loss Model of Cascode GaN HEMTs Based Totem-Pole PFC Converters Considering Stray Inductances” |
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CONFERENCE ROOM III: SIC & GAN CHARACTERIZATION |
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13:50-14:10 |
Ling Yang: “Enhanced DC and RF Characteristics in E∕D-mode AlGaN∕GaN HEMTs by TiN-based source contact technology” |
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14:10-14:30 |
K. Nakano: “Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers” |
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14:30-14:50 |
Jiejie Zhu: “High Performance Normally-Off Al2O3/AlGaN/GaN MOS-HEMTs Using Diffusion-Controlled Interface Oxidation Technique” |
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14:50-15:10 |
Kun Zhou: “Ultralow Angle Bevel-Etched Junction Termination Extension for High Voltage SiC Power Devices” |
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15:10-15:30 |
Xiaochuan Deng: “A Near Ideal Edge Termination Technique for Ultrahigh-Voltage 4H-SiC Devices with Multi-Zone Gradient Field Limiting Ring” |
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15:30-16:00 |
Break |
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16:00-16:20 |
Xingliang Xu: “High-Voltage 4H-SiC GTO Thyristor with Multiple Floating Zone Junction Termination Extension” |
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16:20-16:40 |
Sichao Li: “AlGaN/GaN E-mode MOS-HEMT Using Atomic-Layer-Deposited HfLaO x as Gate Dielectric” |
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16:40-17:00 |
Haojie Li: “Radiation Effects of 5MeV Proton on Wet Oxidation SiO2/4H-SiC MOS Capacitor” |
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17:00-17:20 |
Yaoqiang Duan: “A Physics-based Lumped-charge Model for SiC MPS Diode Implemented in PSPICE” |
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CONFERENCE ROOM VI: Applications of power electronics |
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13:50-14:10 |
Yanchao Li: “Adaptive On-Time Control for High Efficiency Switched-Tank Converter” |
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14:10-14:30 |
Bassem Mouawad: “Novel Silicon Carbide Integrated Power Module for EV application” |
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14:30-14:50 |
Ziwei Ke: “Common Mode Votage Compensation for 7kV SiC-based Modular Multilevel Converter to Reduce Capacitor Voltage Ripple” |
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14:50-15:10 |
He Li: “Ultra-Fast Short Circuit Protection Solutions for E-mode GaN HEMT” |
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15:10-15:30 |
Bo Liu: “Extra Device Capacitance in Three-level Converters and Loss Re-evaluation via Conventional DPT Data” |
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15:30-16:00 |
Break |
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16:00-16:20 |
Chengmin Li: “Layout of Series-connected SiC MOSFET Devices for Medium Voltage Applications” |
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16:20-16:40 |
Janviere Umuhoza: “Evaluation of 1.2 kV SiC MOSFETs in Modular Multilevel Cascaded H-Bridge Three-Phase Inverter for Medium Voltage Grid Application” |
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16:40-17:00 |
Ke Li: “Novel GaN Power Transistor Substrate Connection to Minimize Common Mode Noise” |
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17:00-17:20 |
Haoyang You: “Design of a PWM-Type Bipolar Impulse Generator with High DV/dt Output” |